1N60 DATASHEET PDF

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Datasheet pdf. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche an 1.

L1N60 1. Gate 2. Drain 3. The transistor can be used in various power s 1. The transistor can be used in various power 1. Extended Safe Operating Area 1.

Extended Safe Operating Area Lowe 1. This technology enab 1. GATE 2. DRAIN to withstan 1. In addition, 1. DRAIN to withsta 1. Applications 1. Features 2. Sou 1. This techn 1. I MOS P? In addition, B this a 1. ID A Pin Definition: 1. Source General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

It is mainly suitable for switching mode P D 2. Page No. The device is s 1. Revised Date : Page No. C Feb. TOF They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performa 1. Source 3. Source 4. This latest technology has 1. Change the cookie preferences through the Preferences Center: Change Preferences.

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