IBM EDRAM PDF

Memories play a big role. Incorporating both logic and DRAM on one silicon die and getting both to work well is a challenge. Because of the growing needs to keep the data closer and certainly as more pieces of the system continue to get incorporated onto the same die, there appears to be renewed interest in eDRAM. One thing that should be stated upfront is that Haswell and Power8 are targeting different parts of the market. Figure 1.

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Use of this web site signifies your agreement to the terms and conditions. Personal Sign In. For IEEE to continue sending you helpful information on our products and services, please consent to our updated Privacy Policy. Email Address. Sign In. Since its introduction in the s, the DRAM technology has been driven by cost while the logic technology has been driven by speed, leading to an ever-widening gap between slower memory and faster logic devices.

That has led to the need for increasingly complex levels of memory hierarchies, resulting in considerable degradation of system performance despite many design and architecture compromises. DRAM can provide six to eight times as much memory as SRAM static random access memory in the same area, but has been too slow to be used at any cache level. Our studies, highlighted in this paper, indicated that the use of logic-based DRAM could resolve that difficulty—and was necessary for integrating systems on a chip.

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IBM Unveils World's Fastest On-Chip Dynamic Memory Technology

The z14 has a lot of cache and the z15 even more. For those who are not quite familiar with the way a modern IBM mainframe is organized, you have a rack with a number of compute chassis in them called drawers. Within each drawer on the z15 are four z15 microprocessors usually abbreviated CP for central processor. The drawer is divided into two clusters such that each CP is directly connected to the other one within the cluster.

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IBM unveiled a smaller, faster and cooler type of memory that it said will improve the performance of graphics and other embedded systems over traditional SRAM. Named eDRAM -- for embedded dynamic random access memory -- the technology will be a key feature of IBM's Cell processor road map starting sometime in With the advent of multicore chips, memory has become an increasingly critical aspect of microprocessor performance. It also takes up about one-third the space with one-fifth the standby power of conventional SRAM. Intel and other chipmakers' model of memory and logic differs in that it allows for floating integers and pooled computing resources or stacks double data rate synchronous dynamic random access memory DDR near the CPU. The methods have had tremendous success, especially with multicore processors.

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IBM z15 Almost Doubles Cache Density, Features 960MiB L4 eDRAM

In performance and size, eDRAM is positioned between level 3 cache and conventional DRAM on the memory bus, and effectively functions as a level 4 cache, though architectural descriptions may not explicitly refer to it in those terms. It is also possible to use architectural techniques to mitigate the refresh overhead in eDRAM caches. Certain software utilities can model eDRAM caches. From Wikipedia, the free encyclopedia. This article needs additional citations for verification. Please help improve this article by adding citations to reliable sources. Unsourced material may be challenged and removed.

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IBM's eDRAM Helps AMD More Than It Hurts Intel

Skip to Main Content. A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity. Use of this web site signifies your agreement to the terms and conditions. Personal Sign In. For IEEE to continue sending you helpful information on our products and services, please consent to our updated Privacy Policy. Email Address.

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